Download the IXFH30N50 datasheet PDF.
This datasheet also covers the IXFT30N50 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
1.6 mm (0.062 in. ) from case for 10 s Mounting torque
300 1.13/10 6.
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 0.102 2 -0.206 ±100 TJ = 25°C TJ = 125°C 200 1 0.15 0.16 4 V %/K V %/K nA mA mA W W
International standard packages Low RDS (on).
Full PDF Text Transcription for IXFH30N50 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXFH30N50. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500 V 500 V ID25 30 A 32 ...
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Family VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500 V 500 V ID25 30 A 32 A RDS(on) 0.16 W 0.15 W trr £ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C pulse width limited by TJM TC = 25°C TC = 25°C ID = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C ±30 30N50 32N50 30N50 32N50 30N50 32N50 Maximum Ratings 500 500 ±20 V 30 32 120 128 30 32 1.5 45 5 360 -55 ... +150 150 -55 ... +150 V V V D (TAB) A A A A A A J mJ V/ns W °C °C °C °C Nm/lb
IXFH30N50 Datasheet
