IXFH32N50
Key Features
- 6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 6 * * *
- Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 0.102 2 -0.206 ±100 TJ = 25°C TJ = 125°C 200 1 0.15 0.16 4 V %/K V %/K nA mA mA W W International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated
- Low package inductance - easy to drive and to protect
- Fast intrinsic Diode Applications VDSS VGS = 0 V, ID = 1 mA VDSS temperature coefficient VDS = VGS, ID = 4 mA VGS(th) temperature coefficient VGS = ±20 VDC, VDS = 0 VDS = 0.8
- VDSS VGS = 0 V VGS = 10 V, ID = 15A
- DC-DC converters
- Battery chargers
- Switched-mode and resonant-mode power supplies VGS(th)
