IXYS IXFH42N65X2A
Power MOSFET
MAXIMUM RATINGS
650 V 650 V 30 V 40 V 42 A 90 A 10 A 500 mJ 50 V/ns 660 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 6 g G D S D (Tab) G = Gate D = Drain S = Source Tab = DrainFEATURES
● International Standard Package● Low RDS(ON) and QG
● Avalanche Rated
● Low Package Inductance Advantages
● High Power Density
● Easy to Mount
● Space Savings Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5
● ID25, Note 1 © 2017 IXYS CORPORATION, All Rights Reserved Characteristic Values Min. Typ. Max. 650 V 3.5 5.5 V 100 nA 10 A 1.5 mA 72 m
APPLICATIONS
● Switch-Mode and Resonant-Mode Power Supplies● DC-DC Converters
● PFC Circuits
● AC and DC Motor Drives
● Robotics and Servo Controls DS100810(03/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5
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