* International Standard Package
* Low RDS(ON) and QG
* Avalanche Rated
* Low Package Inductance Advantages
* High Power Density
* Easy to Mount
* Space Savings Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VG
IXFH60N65X2 Datasheet (150.97 KB)
IXFH60N65X2
IXYS
150.97 KB
Power mosfet.
X2-Class HiPerFETTM Power MOSFET IXFH60N65X2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(on) 650V 60A 52m .
📁 Related Datasheet
IXFH60N65X2 N-Channel MOSFET (INCHANGE)
IXFH60N60X Power MOSFET (IXYS)
IXFH60N60X N-Channel MOSFET (INCHANGE)
IXFH60N20 HiPerFET Power MOSFETs (IXYS Corporation)
IXFH60N20F HiPerRFTM Power MOSFETs (IXYS Corporation)
IXFH60N25Q Power MOSFET (IXYS Corporation)
IXFH60N50P3 Polar3 HiperFET Power MOSFET (IXYS Corporation)
IXFH66N20Q Power MOSFET (IXYS Corporation)
IXFH67N10 Power MOSFET (IXYS Corporation)
IXFH67N10 (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching (IXYS Corporation)
