Overview: HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM6N90 IXFH/IXFM6N100 V DSS
900 V 1000 V I
D25
6A 6A trr £ 250 ns R DS(on)
1.8 W 2.0 W Symbol VDSS V
DGR
VGS VGSM ID25 IDM I
AR
EAR dv/dt
PD T
J
TJM T
stg
TL Md Weight
Symbol
VDSS
VGS(th) IGSS IDSS
RDS(on) Test Conditions Maximum Ratings TO-247 AD (IXFH) TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque 6N90 6N100 900 1000
±20 ±30
6 24
6 18
5 V V V V A A A mJ V/ns 180 W -55 ... +150 150
-55 ... +150 °C °C °C 300 °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 3 mA 6N90 6N100 VDS = VGS, ID = 2.5 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 6N90 6N100 Pulse test, t £ 300 ms, duty cycle d £ 2 % 900 1000
2.0 V V 4.5 V
±100 nA
250 mA 1 mA
1.8 W 2.
