* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic Rectifier Applications
IXFH8N80 Datasheet (201.57 KB)
IXFH8N80
IXYS
201.57 KB
Power mosfets.
Preliminary Data Sheet HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) trr IXFH8N80 800.
📁 Related Datasheet
IXFH8N65 Power MOSFET (IXYS Corporation)
IXFH80N08 Power MOSFET (IXYS)
IXFH80N085 Power MOSFET (IXYS Corporation)
IXFH80N10 Power MOSFET (IXYS Corporation)
IXFH80N10Q HiPerFET Power MOSFETs (IXYS Corporation)
IXFH80N15Q Power MOSFET (IXYS Corporation)
IXFH80N20Q Power MOSFETs Q-Class (IXYS)
IXFH80N25X3 Power MOSFET (IXYS)
IXFH80N60X2A N-Channel MOSFET (INCHANGE)
IXFH80N60X2A Power MOSFET (IXYS)
