Overview: HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt IXFH 9N80Q IXFT 9N80Q VDSS I
D25
RDS(on) = 800 V = 9A = 1.1 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM I
D25
I
DM
IAR EAR EAS dv/dt
PD TJ TJM T
stg
TL Md Weight
Symbol
VDSS
V GS(th)
IGSS
IDSS
RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient T C = 25°C T C = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I
S ≤ I,
DM di/dt ≤ 100 A/µs, V DD ≤ V, DSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s
Mounting torque TO-247 TO-268 Maximum Ratings
800 V 800 V ±20 V ±30 V
9A 36 A
9A 20 mJ 700 mJ
5 V/ns 180 -55 ... +150
150 -55 ... +150
300
1.13/10 6 4 W
°C °C °C °C
Nm/lb.in.
g g Test Conditions
VGS = 0 V, ID = 1 mA V = V , I = 2.5 mA
DS GS D
VGS = ±20 VDC, VDS = 0 Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max. 800 V
3.0 5.
