Overview: HiperFETTM Power MOSFETs IXFK180N07 IXFX180N07 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier D G S Symbol
VDSS VDGR
VGSS VGSM
ID25 IL(RMS) IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md FC
Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 70 V 70 V ±20 V ±30 V 180 A 160 A 720 A 180 A 3 J 5 V/ns 568 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 260
1.13/10 20..120 /4.5..27
10 6 °C °C
Nm/lb.in. N/lb.
g g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 70 V 2.0 4.
