Datasheet4U Logo Datasheet4U.com

IXFK24N100F - HiPerRF Power MOSFETs

This page provides the datasheet information for the IXFK24N100F, a member of the IXFX24N100F HiPerRF Power MOSFETs family.

Features

  • l l D = Drain TAB = Drain l 0.4/6 Nm/lb. in. 6 10 g g l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier.

📥 Download Datasheet

Datasheet preview – IXFK24N100F

📁 Similar Datasheet

  • IXFK24N80P - PolarHV HiPerFET Power MOSFET (IXYS Corporation)
  • IXFK20N120 - HiPerFET Power MOSFETs (IXYS Corporation)
  • IXFK20N120P - Power MOSFET (IXYS Corporation)
  • IXFK20N80Q - Power MOSFET (IXYS Corporation)
  • IXFK21N100F - Power MOSFET (IXYS Corporation)
  • IXFK220N15P - Polar Power MOSFET HiperFET (IXYS Corporation)
  • IXFK220N17T2 - GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS Corporation)
  • IXFK25N80 - (IXFx2xN80) HiPerFET Power MOSFETs (IXYS Corporation)
  • IXFK25N90 - Power MOSFET (IXYS Corporation)
  • IXFK26N90 - Power MOSFET (IXYS Corporation)
Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text
Advance Technical Information www.DataSheet4U.com HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFX 24N100F VDSS = 1000 V IXFK 24N100F ID25 = 24 A RDS(on) = 0.39 Ω trr ≤ 250 ns PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1000 1000 ± 20 ± 30 24 96 24 60 3.0 10 560 -55 ... +150 150 -55 ...
Published: |