Overview: Preliminary Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK360N10T IXFX360N10T VDSS = ID25 = RDS(on) ≤ trr ≤ 100V 360A 2.9mΩ 130ns TO-264 (IXFK) Symbol
VDSS VDGR
VGSS VGSM
ID25 IL(RMS) IDM
IA EAS
PD
dv/dt
TJ TJM Tstg
TL TSOLD
Md FC
Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 100 V 100 V ± 20 V ± 30 V 360 A 160 A 900 A 100 A 3 J 1250 W 20 V/ns -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 20..120 /4.5..27 Nm/lb.in. N/lb. 10 g 6 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA Characteristic Values Min. Typ. Max. 100 V VGS(th) VDS = VGS, ID = 3mA 2.5 4.5 V IGSS VGS = ± 20V, VDS = 0V ± 200 nA IDSS VDS = VDSS, VGS = 0V TJ = 150°C 25 μA 2.5 mA RDS(on) VGS = 10V, ID = 100A, Notes 1 & 2 2.
