IXFK360N10T Description
+175 °C 300 °C 260 °C 1.13/10 20..120 /4.5..27 Nm/lb.in. 10 g 6 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA Characteristic Values Min.
IXFK360N10T is Power MOSFET manufactured by IXYS .
+175 °C 300 °C 260 °C 1.13/10 20..120 /4.5..27 Nm/lb.in. 10 g 6 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA Characteristic Values Min.