Description
www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VG.
Features
* International standard packages
* Molding epoxies meet UL 94 V-0 flammability classification
* Low RDS (on) HDMOSTM process
* Unclamped Inductive Switching (UIS) rated
Applications
* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 35 30 V V nA mA mA mW mW
* DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode pow