* l International standard packages l Low R HDMOSTM process DS (on) l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless
IXFM10N90 Datasheet (84.49 KB)
IXFM10N90
IXYS
84.49 KB
Power mosfets.
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM10N90 IXFH/IXFM12N90 IXFH13N90 V DSS 900 V 900 V 90.
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