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IXYS

IXFN110N85X Datasheet Preview

IXFN110N85X Datasheet

Power MOSFET

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X-Class HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN110N85X
D
G
S
S
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dv/dt
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
50/60 Hz, RMS t = 1 minute
IISOL 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
850
V
850
V
30
V
40
V
110
A
220
A
55
A
3
J
1170
W
50
V/ns
-55 ... +150
C
150
C
-55 ... +150
C
2500
V~
3000
V~
1.5/13
1.3/11.5
Nm/lb.in
Nm/lb.in
30
g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 55A, Note 1
Characteristic Values
Min. Typ. Max.
850
V
3.5
5.5 V
200 nA
50 A
5 mA
33 m
VDSS =
ID25 =
RDS(on)
850V
110A
33m
miniBLOC, SOT-227
E153432
S
G
G = Gate
S = Source
S
D
D = Drain
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation Voltage 2500V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2019 IXYS CORPORATION, All Rights Reserved
DS100731A(11/19)




IXYS

IXFN110N85X Datasheet Preview

IXFN110N85X Datasheet

Power MOSFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 55A, Note 1
RGi
Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 55A
RG = 1(External)
VGS = 10V, VDS = 0.5 VDSS, ID = 55A
Characteristic Values
Min. Typ. Max
43
72
S
0.55
17
nF
16
nF
260
pF
470
pF
2170
pF
50
ns
25
ns
144
ns
11
ns
425
nC
105
nC
225
nC
0.107C/W
0.05C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS , VGS = 0V, Note 1
trr
QRM
IRM
IF = 55A, -di/dt = 300A/s
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
110 A
440 A
1.4 V
205
ns
5.5
μC
54.0
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXFN110N85X
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



Part Number IXFN110N85X
Description Power MOSFET
Maker IXYS
Total Page 3 Pages
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IXFN110N85X Datasheet PDF





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