* International standard packages
* miniBLOC, with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance
* Fast intrinsic Rectifi
IXFN180N20 Datasheet (154.72 KB)
IXFN180N20
IXYS
154.72 KB
Power mosfets single die mosfet.
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr Preliminary data Symbol VDSS VDGR VGS VGSM.
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