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IXFN82N60Q3 - Power MOSFET

Features

  • International Standard Package.
  • Low Intrinsic Gate Resistance.
  • miniBLOC with Aluminum Nitride Isolation.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier.
  • Low RDS(on) and QG Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Datasheet preview – IXFN82N60Q3

Datasheet Details

Part number IXFN82N60Q3
Manufacturer IXYS
File Size 637.19 KB
Description Power MOSFET
Datasheet download datasheet IXFN82N60Q3 Datasheet
Additional preview pages of the IXFN82N60Q3 datasheet.

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Full PDF Text Transcription

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN82N60Q3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque Maximum Ratings 600 V 600 V 30 V 40 V 66 A 240 A 82 A 4 J 50 960 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 V/ns W C C C V~ V~ Nm/lb.in. Nm/lb.in.
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