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IXFP4N85XM - Power MOSFET

Features

  • International Standard Package.
  • Plastic Overmolded Tab.
  • Low RDS(ON) and QG.
  • 2500V~ Electrical Isolation.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Full PDF Text Transcription

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Preliminary Technical Information X-Class HiPERFET Power MOSFET (Electrically Isolated Tab) IXFP4N85XM VDSS = ID25 =  RDS(on) 850V 3.5A 2.5 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 50/60 Hz, 1 Minute Mounting Torque Maximum Ratings 850 V 850 V 30 V 40 V 3.5 A 10.0 A 2 A 125 mJ 50 V/ns 35 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 2500 V~ 1.13 / 10 2.5 Nm/lb.
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