IXYS IXFP4N85XM
Power MOSFET
MAXIMUM RATINGS
850 V 850 V 30 V 40 V 3.5 A 10.0 A 2 A 125 mJ 50 V/ns 35 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 2500 V~ 1.13 / 10 2.5 Nm/lb.in g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 2A, Note 1 Characteristic Values Min. Typ. Max. 850 V 3.0 5.5 V 100 nA 5 A 500 A 2.5 OVERMOLDED TO-220 GDS Isolated Tab G = Gate S = Source D = DrainFEATURES
● International Standard Package● Plastic Overmolded Tab
● Low RDS(ON) and QG
● 2500V~ Electrical Isolation
● Avalanche Rated
● Low Package Inductance Advantages
● High Power Density
● Easy to Mount
● Space Savings
APPLICATIONS
● Switch-Mode and Resonant-Mode Power Supplies● DC-DC Converters
● PFC Circuits
● AC and DC Motor Drives
● Robotics and Servo Controls © 2018 IXYS CORPORATION, All Rights Reserved DS100782A(10/18) Symbol Test Condi...