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IXYS

IXFP4N85XM Datasheet Preview

IXFP4N85XM Datasheet

Power MOSFET

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Preliminary Technical Information
X-Class HiPERFET
Power MOSFET
(Electrically Isolated Tab)
IXFP4N85XM
VDSS =
ID25 =
RDS(on)
850V
3.5A
2.5
N-Channel Enhancement Mode
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C, Limited by TJM
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
50/60 Hz, 1 Minute
Mounting Torque
Maximum Ratings
850
V
850
V
30
V
40
V
3.5
A
10.0
A
2
A
125
mJ
50
V/ns
35
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
2500
V~
1.13 / 10
2.5
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 2A, Note 1
Characteristic Values
Min. Typ. Max.
850
V
3.0
5.5 V
100 nA
5 A
500 A
2.5
OVERMOLDED
TO-220
GDS
Isolated Tab
G = Gate
S = Source
D = Drain
Features
International Standard Package
Plastic Overmolded Tab
Low RDS(ON) and QG
2500V~ Electrical Isolation
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2018 IXYS CORPORATION, All Rights Reserved
DS100782A(10/18)




IXYS

IXFP4N85XM Datasheet Preview

IXFP4N85XM Datasheet

Power MOSFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 2A, Note 1
RGi
Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 2A
RG = 30(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 VDSS, ID = 2A
RthJC
RthCS
Characteristic Values
Min. Typ. Max
1.2
2.0
S
3
247
pF
305
pF
5
pF
27
60
13
27
28
20
7.0
2.3
3.3
0.50
pF
pF
ns
ns
ns
ns
nC
nC
nC
3.57 C/W
C/W
IXFP4N85XM
OVERMOLDED TO-220
(IXFP...M)
12 3
Terminals: 1 - Gate
2 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 2A, -di/dt = 100A/μs
VR = 100V
Characteristic Values
Min. Typ. Max
4A
16 A
1.4 V
170
ns
770 nC
9
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537



Part Number IXFP4N85XM
Description Power MOSFET
Maker IXYS
Total Page 3 Pages
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