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IXFP8N65X2 - Power MOSFET

Download the IXFP8N65X2 datasheet PDF. This datasheet also covers the IXFY8N65X2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFY8N65X2-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFP8N65X2 N-Channel MOSFET INCHANGE
IXFP8N50PM Power MOSFET IXYS Corporation
IXFP8N85X N-Channel MOSFET INCHANGE
IXFP8N85XM N-Channel MOSFET INCHANGE
IXFP05N100M High Voltage HiperFET IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFP8N85X Power MOSFET
IXFP8N85XM Power MOSFET
IXFP80N25X3 Power MOSFET
IXFP12N65X2 Power MOSFET
IXFP12N65X2M Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
X2-Class HiPERFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFY8N65X2 IXFA8N65X2 IXFP8N65X2 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 650 V 650 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 8 16 4 250 50 150 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10.65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-252 TO-263 TO-220 0.35 g 2.50 g 3.