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IXYS

IXFQ20N50P3 Datasheet Preview

IXFQ20N50P3 Datasheet

Power MOSFET

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Preliminary Technical Information
Polar3TM HiperFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFA20N50P3
IXFP20N50P3
IXFQ20N50P3
IXFH20N50P3
TO-263 AA (IXFA)
VDSS =
ID25 =
RDS(on)
500V
20A
300m
TO-220AB (IXFP)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FMCd
Weight
G
S
D (Tab)
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
500
500
30
40
V
V
V
V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
20
40
10
300
35
380
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
 C
 C
 C
Maximum Lead Temperature for Soldering
300 °C
Plastic Body for 10s
260 °C
Mounting Force
Mounting Torque
10..65/2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
TO-263
TO-220
TO-3P
TO-247
2.5 g
3.0 g
5.5 g
6.0 g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1.5mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.0 V
          100 nA
25 A
1.25 mA
300 m
GD S
TO-3P (IXFQ)
D (Tab)
G
D
S
TO-247 (IXFH)
D (Tab)
GDS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
© 2013 IXYS CORPORATION, All Rights Reserved
DS100414A(11/13)




IXYS

IXFQ20N50P3 Datasheet Preview

IXFQ20N50P3 Datasheet

Power MOSFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
gfs VDS = 20V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi Gate Input Resistance
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
TO-220
TO-247 & TO-3P
IXFA20N50P3 IXFA20N50P3
IXFQ20N50P3 IXFH20N50P3
Characteristic Values
Min. Typ.
Max.
11 18
S
1800
230
8.3
pF
pF
pF
2.3  
10 ns
5 ns
43 ns
9 ns
36 nC
7 nC
13 nC
0.50
0.25
0.36 C/W
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr
IRM
QRM
IF = 10A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ.
Max.
20 A
80 A
1.4 V
250 ns
8.0 A
0.6 μC
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXFQ20N50P3
Description Power MOSFET
Maker IXYS
Total Page 6 Pages
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