* l IXYS advanced low Q process g l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Unclamped Inductive Switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification VDS = 0.8 VDSS VGS = 0 V TJ = 25°C TJ =
IXFT9N80Q Datasheet (Direct Link)
IXFT9N80Q
IXYS
Direct Link
Power mosfets.
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt IXFH 9N80Q IXFT 9N80Q VDSS I D25 RDS(on) = 800 V = 9.
📁 Related Datasheet
IXFT94N30T Power MOSFET (IXYS)
IXFT100N30X3HV N-Channel Power MOSFET (IXYS)
IXFT10N100 Power MOSFETs (IXYS)
IXFT120N15P Polar MOSFETs (IXYS Corporation)
IXFT12N100 Power MOSFETs (IXYS)
IXFT12N100F Power MOSFET (IXYS Corporation)
IXFT12N50F HiPerRF Power MOSFETs F-Class: MegaHertz Switching (IXYS Corporation)
IXFT13N100 Power MOSFETs (IXYS)
IXFT13N80Q HiPerFET Power MOSFETs (IXYS Corporation)
IXFT140N10P N-Channel Power MOSFET (IXYS Corporation)
