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IXYS

IXFV96N20PS Datasheet Preview

IXFV96N20PS Datasheet

PolarHT Power MOSFET

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PolarHTTM
Power MOSFET
IXFH 96N20P
IXFV 96N20P
IXFV 96N20PS
N-Channel Enhancement Mode
Preliminary Data Sheet
VDSS
ID25
RDS(on)
trr
= 200 Vwww.DataSheet4U.com
= 96 A
= 24 m
< 200 ns
Symbol
Test Conditions
Maximum Ratings TO-247 (IXFH)
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
FC
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
Mounting force
Mounting torque (TO-247)
TO-247
PLUS220
200 V
200 V
±20 V
±30 V
96 A
75 A
225 A
60 A
50 mJ
1.5 J
10 V/ns
600 W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300 °C
250 °C
11...65/2.5...111N/lb
1.13/10 Nm/lb.in.
6g
4g
GDS
PLUS220 (IXFV)
(TAB)
G
DS
(TAB)
PLUS220SMD (IXFV__S)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
200 V
VGS(th)
VDS = VGS, ID = 4 mA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
24 m
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99222(09/04)




IXYS

IXFV96N20PS Datasheet Preview

IXFV96N20PS Datasheet

PolarHT Power MOSFET

No Preview Available !

IXFH 96N20P
IXFV 96N20P IXFV 96N20PS
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
www.DataSheet4U.com
TO-247 (IXFH) Outline
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 4 (External)
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
(TO-247, PLUS220)
40 52
4800
1020
270
28
30
75
30
145
30
80
0.21
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.25 K/W
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. typ. Max.
IS VGS = 0 V
96 A
ISM Repetitive
240 A
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
1.5 V
123
Terminals: 1 - Gate 2 - Drain
3 - Source TAB - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220 (IXFV) Outline
E
E1
L2
A
A1
E1
trr IF = 25 A
QRM -di/dt = 100 A/µs
IRM VR = 100 V
120 200 ns
0.7 µC
7 A L1
D
L3
D1
PLUS220SMD (IXFV__S) Outline
L
E
E1
A
L2 A1
E1
D
L3
L
L1
2X b
e
c
A2
A3
L4
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
A
A1
A2
A3
b
c
D
D1
E
E1
e
L
L1
L2
L3
L4
2X e
3X b
c
A2
Terminals:
1 - Gate 2 - Drain
3 - Source TAB - Drain
A
A1
A2
b
c
D
D1
E
E1
e
L
L1
L2
L3
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692


Part Number IXFV96N20PS
Description PolarHT Power MOSFET
Maker IXYS
Total Page 5 Pages
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