* (TAB) D (TAB) D (TAB) D = Drain TAB = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 200 V VGS(th) VDS = VGS, ID = 4 mA 2.5 5.0 V I GSS V GS = ±20 V, DC V DS = 0 ±100 nA IDSS VDS = VDSS
IXFV96N20PS Datasheet (266.72 KB)
IXFV96N20PS
IXYS
266.72 KB
Power mosfet.
PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 96N20P IXFT 96N20P IXFV 96N20P V DSS ID25 RDS(o.
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