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IXYS

IXFX120N65X2 Datasheet Preview

IXFX120N65X2 Datasheet

Power MOSFET

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Preliminary Technical Information
X2-Class HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK120N65X2
IXFX120N65X2
VDSS =
ID25 =
RDS(on)
650V
120A
24m
TO-264P (IXFK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dv/dt
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
650 V
650 V
30 V
40 V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
120
240
15
3.5
1250
50
-55 ... +150
150
-55 ... +150
A
A
A
J
W
V/ns
C
C
C
Maximum Lead Temperature for Soldering
300 °C
Plastic Body for 10s
260 °C
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in
N/lb
TO-264P
PLUS247
10 g
6g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
650 V
3.5 5.0 V
100 nA
50 A
5 mA
24 m
G
D
S
PLUS247 (IXFX)
Tab
G
DS
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2016 IXYS CORPORATION, All Rights Reserved
DS100685B(03/16)




IXYS

IXFX120N65X2 Datasheet Preview

IXFX120N65X2 Datasheet

Power MOSFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs VDS = 10V, ID = 0.5 • ID25, Note 1
RGi Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
RthJC
RthCS
Characteristic Values
Min. Typ. Max
46 76
S
0.74
14
8700
5.5
nF
pF
pF
455
1930
pF
pF
39 ns
26 ns
82 ns
12 ns
240 nC
87 nC
65 nC
0.10C/W
0.15C/W
IXFK120N65X2
IXFX120N65X2
TO-264P Outline
E
Q
R Q1
D
R1
1 23
L1
A
E1
D1
4
D2
b1
x2 e
b2
c
b
A
Terminals: 1 = Gate
2,4 = Drain
3 = Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = IS , VGS = 0V, Note 1
trr
QRM
IRM
IF = 60A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
120 A
480 A
1.4 V
220
2.3
21.0
ns
μC
A
PLUS247TM Outline
Terminals: 1 - Gate
2,4 - Drain
3 - Source
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXFX120N65X2
Description Power MOSFET
Maker IXYS
Total Page 5 Pages
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