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HiPerFET TM Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
IXFK 21N100Q IXFX 21N100Q
VDSS = 1000 V ID25 = 21 A RDS(on)= 0.50 Ω
trr ≤ 250 ns
PLUS 247TM (IXFX)
Maximum Ratings 1000 1000 ± 20 ± 30 21 84 21 60 2.5 10 500 -55 ... +150 150 -55 ... +150 300 0.4/6 6 10 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in.
IXFX21N100Q Datasheet
