* l l D = Drain TAB = Drain l 0.4/6 Nm/lb.in. 6 10 g g l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications Symbol Test Conditions Characteristic Val
IXFX24N100F Datasheet (120.24 KB)
IXFX24N100F
IXYS
120.24 KB
Hiperrf power mosfets.
Advance Technical Information www.DataSheet4U.com HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Lo.
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