* l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 4.5 ± 200 25 1 0.25 V V nA µA mA Ω l l l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0
IXFX26N60Q Datasheet (124.22 KB)
IXFX26N60Q
IXYS
124.22 KB
Hiperfet power mosfet.
Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IX.
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