Overview: High Voltage IGBT
Low VCE(sat)
Preliminary Data Sheet IXGH 40N120A2 IXGT 40N120A2 IXGH 40N120A2 IXGT 40N120A2 V = 1200 I CES = 75 V ≤C25 CE(sat) 2.0 V A V Symbol Test Conditions Maximum Ratings VCES VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA)
PC TJ TTJsMtg TL
TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C Continuous Transient TC = 25°C, IGBT chip capability TC = 110°C TJ ≤ 150°C, tp < 300 μs VGE = 15 V, TVJ = 150°C, RG = 5 Ω Clamped inductive load, VCE < 960 V TC = 25°C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 seconds Plastic body for 10 seconds Mounting torque (ixgh)
(IXGH) (IXGT) 1200 1200
± 20 ± 30
75 40 160
ICM = 80 V V
V V
A A A
A 360
-55 ... +150 150 -55 ... +150
300 W
°C °C °C
°C 260 °C 1.3/10 Nm/lb.in.
6.0 g 4.0 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) VGE(th) VGE(th) IC = 1 mA, VGE = 0 V IC = 250 μA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC110, VGE = 15V Characteristic Values Min. Typ. Max. 1200 3.0 V 5.0 V TJ = 125°C 50 μA 1mA
± 100 nA 2.
