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IXYS

IXGH40N60B Datasheet Preview

IXGH40N60B Datasheet

IGBT

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HiPerFASTTM IGBT
Preliminary data sheet
IXGH 40N60B
IXGT 40N60B
VCES
IC25
V
CE(sat)
tfi
= 600 V
= 75 A
= 2.1 V
= 180 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10 W
Clamped inductive load, L = 100 mH
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque (M3)
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
40 A
150 A
ICM = 80
@ 0.8 VCES
250
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10Nm/lb.in.
TO-247 AD
6
TO-247 SMD 4
g
g
Symbol
BVCES
VGE(th)
I CES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 250 mA, VGE = 0 V
BVCES temperature coefficient
IC = 250 mA, VCE = VGE
VGE(th) temperature coefficient
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 150°C
VCE = 0 V, VGE = ±20 V
IC = IC110, VGE = 15 V
600
0.072
2.5
-0.286
V
%/K
5V
%/K
200 mA
1 mA
±100 nA
1.6 2.1 V
TO-247 AD
(IXGH)
G
CE
TO-268 (D3)
(IXGT)
G
E
C (TAB)
(TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
l International standard packages
JEDEC TO-268 surface
mountable and JEDEC TO-247 AD
l High current handling capability
l Latest generation HDMOSTM process
l MOS Gate turn-on
- drive simplicity
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
l Uninterruptible power supplies (UPS)
l Switched-mode and resonant-mode
power supplies
Advantages
l Space savings (two devices in one
package)
l High power density
l Suitable for surface mounting
l Switching speed for high frequency
applications
l Easy to mount with 1 screw,TO-247
(isolated mounting screw hole)
© 2001 IXYS All rights reserved
98799 (01/01)




IXYS

IXGH40N60B Datasheet Preview

IXGH40N60B Datasheet

IGBT

No Preview Available !

Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IXGH40N60B IXGT40N60B
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC110; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC110, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
(IXGH40N60B)
30 42
S
3300
310
65
pF
pF
pF
116 nC
23 nC
55 nC
25 ns
30 ns
180 300 ns
180 270 ns
2.7 4.0 mJ
25 ns
35 ns
0.4 mJ
300 ns
270 ns
4.0 mJ
0.50 K/W
0.25
K/W
TO-247 AD Outline
ÆP
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b 1.65 2.13
1
b 2.87 3.12
2
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
ÆP 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025


Part Number IXGH40N60B
Description IGBT
Maker IXYS
Total Page 2 Pages
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