IXGJ50N60C4D1 Overview
+150 °C 300 260 20..120 / 4.5..27 °C °C N/lb. 2500 V~ 4.0 g G CE Isolated Tab G = Gate C = Collector E = Emitter.
| Part number | IXGJ50N60C4D1 |
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| Datasheet | IXGJ50N60C4D1 Datasheet PDF (Download) |
| File Size | 401.97 KB |
| Manufacturer | IXYS (now Littelfuse) |
| Description | High-Gain IGBT |
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+150 °C 300 260 20..120 / 4.5..27 °C °C N/lb. 2500 V~ 4.0 g G CE Isolated Tab G = Gate C = Collector E = Emitter.