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IXGJ50N60C4D1 Datasheet, IXYS

IXGJ50N60C4D1 igbt equivalent, high-gain igbt.

IXGJ50N60C4D1 Avg. rating / M : 1.0 rating-15

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IXGJ50N60C4D1 Datasheet

Features and benefits

z Optimized for Low Switching Losses z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Anti-Parallel Ultra .

Application

z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Lamp Ballasts © 2011 IXYS CORPORATION.

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