IXYS IXGJ50N60C4D1
High-Gain IGBT
| Part No. | IXGJ50N60C4D1 |
|---|---|
| Datasheet | IXGJ50N60C4D1 Download |
| Manufacturer |  IXYS |
| Description | High-Gain IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
600 V 600 V ±20 V ±30 V 52 A 21 A 12 A 220 A ICM = 72 A ≤ VCE VCES 125 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 260 20..120 / 4.5..27 °C °C N/lb. 2500 V~ 4.0 g G CE Isolated Tab G = Gate C = Collector E = EmitterFEATURES
z Optimized for Low Switching Losses z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Anti-Parallel Ultra Fast Diode z Square RBSOA Advantages z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 36A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 600 V 4.0 6.5 V 50 μA 2.5 mA ±100 nA 1.95 2.50 V 1.65 VAPPLICATIONS
z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Lamp Ballasts © 2011 IXYS CORPORATION, All Rights Reserved DS100369A(10/11) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 36A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge IC = 36A, VGE = 15V, VCE = 0.
