IXGJ50N60C4D1 Overview
Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface z 2500V~ Electrical Isolation
- Anti-Parallel Ultra Fast Diode
- Square RBSOA Advantages
- Easy to Mount
| Part | IXGJ50N60C4D1 |
|---|---|
| Description | High-Gain IGBT |
| Manufacturer | IXYS |
| Size | 401.97 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| SLIMDIP-L | Mitsubishi Electric | DIPIPM RC-IGBT inverter bridge |
| SLIMDIP-S | Mitsubishi Electric | DIPIPM RC-IGBT inverter bridge |
| SP25N135T | Xiner | Trench-FS IGBT |