Datasheet4U Logo Datasheet4U.com

IXGK60N60C2D1 - IGBT

Datasheet Summary

Features

  • Very high frequency IGBT and anti-parallel FRED in one package.
  • Square RBSOA.
  • High current handling capability.
  • MOS Gate turn-on for drive simplicity.
  • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM.

📥 Download Datasheet

Datasheet preview – IXGK60N60C2D1

Datasheet Details

Part number IXGK60N60C2D1
Manufacturer IXYS
File Size 187.21 KB
Description IGBT
Datasheet download datasheet IXGK60N60C2D1 Datasheet
Additional preview pages of the IXGK60N60C2D1 datasheet.
Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text
HiPerFASTTM IGBT with Diode IXGK 60N60C2D1 IXGX 60N60C2D1 C2-Class High Speed IGBTs V I CES VC25 t CE(sat) fi(typ) = 600 V = 75 A = 2.5 V = 35 ns Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C ICM TC = 25°C, 1 ms SSOA (RBSOA) PC TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C Mounting torque, TO-264 TO-264 PLUS247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 60 A 48 A 300 A ICM = 100 A 480 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in.
Published: |