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IXGN100N170 - High Voltage IGBT

Key Features

  • Optimized for Low Conduction and Switching Losses.
  • Isolation Voltage 2500V~.
  • Short Circuit Capability.
  • International Standard Package.
  • High Current Handling Capability Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription for IXGN100N170 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXGN100N170. For precise diagrams, and layout, please refer to the original PDF.

High Voltage IGBT IXGN100N170 VCES = 1700V IC90 = 95A V CE(sat)  3.0V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg VISOL Md Weight...

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IC25 IC90 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 1 Clamped Inductive Load VGE = 15V, VCE = 1250V, TJ = 125°C RG = 10, Non Repetitive TC = 25°C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque E Maximum Ratings 1700 V 1700 V ±20 V ±30 V 160 A 95 A 600 A ICM = 200 A @0.8 • VCES 10 μs 735 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.

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