IXGN50N120C3H1 igbt equivalent, high-speed pt igbt.
z z z z z z
V V V V A A A A A
Ec G
Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter
VGE = 15V, TVJ = 125°C, R.
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE TJ = 125.
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