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IXGP2N100 - High Voltage IGBT

Key Features

  • • International standard package • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V IC90 2.0 A 2.0 A VCE(SAT) 2.7 V 3.5 V Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES VGEM IC25 IC90 ICM SSOA (RBSOA) Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 150W Clamped inductive load PC TJ TJM TSTG Weight TC = 25°C Max. Lead Temperature for Soldering (1.6mm from case for 10s) Maximum Ratings 1000 V 1000 V ±20 V ±30 V 4 2 8 ICM = 6 @ 0.8 VCES 25 -55 ... +150 150 -55 ... +150 4 300 A A A A W °C °C °C g °C Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 25µA, VGE = 0 V 1000 V VGE(th) IC = 25µA, VCE = VGE 2.5 5.0 V ICES VCE = 0.