900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






IXYS

IXGP2N100A Datasheet Preview

IXGP2N100A Datasheet

High Voltage IGBT

No Preview Available !

High Voltage IGBT
VCES
IXGP 2N100 1000 V
IXGP 2N100A 1000 V
IC90
2.0 A
2.0 A
VCE(SAT)
2.7 V
3.5 V
Symbol
VCES
VCGR
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE = 15 V, TJ = 125°C, RG = 150W
Clamped inductive load
PC
TJ
TJM
TSTG
Weight
TC = 25°C
Max. Lead Temperature for
Soldering (1.6mm from case for 10s)
Maximum Ratings
1000
V
1000
V
±20 V
±30 V
4
2
8
ICM = 6
@ 0.8 VCES
25
-55 ... +150
150
-55 ... +150
4
300
A
A
A
A
W
°C
°C
°C
g
°C
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
BVCES
IC = 25µA, VGE = 0 V
1000
V
VGE(th)
IC = 25µA, VCE = VGE
2.5 5.0 V
ICES VCE = 0.8 VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
10 µA
200 µA
IGES VCE = 0 V, VGE = ±20 V
+ 50 nA
VCE(sat)
IC = IC90, VGE = 15 V
IXGP2N100
IXGP2N100A
2.7 V
3.5 V
TO-220
1
2
3
1 = Gate
3 = Emitter
4
2 = Collector
4 = Collector
Features
• International standard package
• Low VCE(sat)
- for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
• Capacitor discharge
• Anode triggering of thyristors
• DC choppers
• Switched-mode and resonant-mode
power supplies.
© 2000 IXYS All rights reserved
95514C (9/00)




IXYS

IXGP2N100A Datasheet Preview

IXGP2N100A Datasheet

High Voltage IGBT

No Preview Available !

IXGP 2N100
IXGP 2N100A
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs IC = IC90, VCE = 10 V,
Pulse test, t < 300 µs, duty cycle < 2 %
Characteristic Values
Min. Typ.
Max.
0.7 1.5
S
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
101 pF
12 pF
1.8 pF
Qg IC = Ic90, VGE = 15 V, VCE = 0.5 VCES
Qge
Qgc
7.8 nC
1.5 nC
4.2 nC
td(on) Inductive load, TJ = 25°C
15 ns
tri IC = IC90, VGE = 15 V
20 ns
td(off)
RG = 150 W
300 600 ns
tfi VCLAMP = 0.8 VCES
IXGP2N100
560 1000 ns
IXGP2N100A 180 360 n s
Eoff Note 1
IXGP2N100 0.56 1.2 mJ
IXGP2N100A 0.26 0.6 mJ
td(on)
tri
E(on)
td(off)
tfi
Eoff
RthJC
RthJA
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
RG = R(off) = 150 W
VCLAMP = 0.8 VCES
Note 1
IXGP2N100
IXGP2N100A
IXGP2N100
IXGP2N100A
15
25
0.3
400
800
360
1.0
0.5
ns
ns
mJ
ns
ns
ns
mJ
mJ
5 K/W
110 K/W
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG.
TO-220 Outline
The data herein reflects the advanced objective technical specification and characterization data from engineering lots.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508
4,850,072 4,931,844 5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025



Part Number IXGP2N100A
Description High Voltage IGBT
Maker IXYS
Total Page 2 Pages
PDF Download

IXGP2N100A Datasheet PDF





Similar Datasheet

1 IXGP2N100 High Voltage IGBT
IXYS
2 IXGP2N100A High Voltage IGBT
IXYS





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy