IXGQ85N33PCD1
Overview
- International standard package
- Fast tfi for minimum turn off switching losses
- MOS Gate turn-on - drive simplicity
- Positive dVsat/dt for paralleling 260 1.3/10 5.5 Nm/. g ≤ Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. V GE(th) IC = 1 mA, VCE = VGE
- 0 6.0 V ICES VCE = 330 V VGE = 0 V TJ = 125°C 1 μA 200 μA IGES VCE = 0 V, VGE = ±20 V ±100 nA VCE(sat) VGE = 15V, Note 1 IC = 50 A TJ = 125°C IC = 100 A TJ = 125°C
- 43 2.1 V 1.47 V 1.85 3.0 V 2.0 V © 2006 IXYS CORPORATION, All rights reserved
