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IXYS

IXGQ85N33PCD1 Datasheet Preview

IXGQ85N33PCD1 Datasheet

High Speed IGBT

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Advance Technical Information
PolarTM High Speed
IGBT
with Anti-Parallel Diode
for PDP Sustain Circuit
IXGQ85N33PCD1
VCES
ICP
VCE(sat)
=
=
330 V
340 A
2.1 V
Symbol
V
CES
Test Conditions
TJ = 25°C to 150°C
VGEM
IC25
ICP
IDP
IC(RMS)
SSOA
(RBSOA)
TC = 25°C, IGBT chip capability
TJ 150°C, tp 1 μs, D 1%
TJ 150°C, tp < 10 μs
Lead current limit
VGE = 15 V, TVJ = 150°C, RG = 20 Ω
Clamped inductive load, VCE < 300 V
PC TC = 25°C
TJ
TJM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body
Md Mounting torque
Weight
Maximum Ratings
330 V
TO-3P
±30 V
85
340
40
A GC
A E (TAB)
G = Gate
C = Collector
A E = Emitter TAb = Collector
75 A
ICM = 96
A
150
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
Features
International standard package
Fast tfi for minimum turn off
switching losses
MOS Gate turn-on
- drive simplicity
Positive dVsat/dt for
paralleling
260
1.3/10
5.5
Nm/lb.in.
g
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
V
GE(th)
IC = 1 mA, VCE = VGE
3.0 6.0 V
ICES VCE = 330 V
VGE = 0 V
TJ = 125°C
1 μA
200 μA
IGES VCE = 0 V, VGE = ±20 V
±100 nA
VCE(sat)
VGE = 15V,
Note 1
IC = 50 A
TJ = 125°C
IC = 100 A
TJ = 125°C
1.43 2.1 V
1.47 V
1.85 3.0 V
2.0 V
© 2006 IXYS CORPORATION, All rights reserved
DS99610D(02/07)




IXYS

IXGQ85N33PCD1 Datasheet Preview

IXGQ85N33PCD1 Datasheet

High Speed IGBT

No Preview Available !

IXGQ85N33PCD1
SymbolTest Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs IC = 43 A, VCE = 10 V
30 49
S
Cies
Coes
Cres
Qg
Qge
Q
gc
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 43 A, VGE = 15 V, VCE = 0.5 VCES
2200
155
25
80
15
23
pF
pF
pF
nC
nC
nC
td(on)
t
ri
td(off)
tfi
Resistive load, TJ = 25°C
IC = 50 A, VGE = 15 V
VCE = 240 V, RG = 5 Ω
20 ns
43 ns
87 ns
72 350 ns
t
d(on)
tri
td(off)
tfi
RthJC
RthCK
Resistive load, TJ = 125°C
IC = 50 A, VGE = 15 V
VCE = 240 V, RG = 5 Ω
20 ns
95 ns
88 ns
130 ns
0.833 K/W
0.25 K/W
TO-3P (IXTQ) Outline
Reverse Diode
SymbolTest Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VF
RthJC
trr
IF = 20A,VGE = 0 V, Note 1
IF = 40A,VGE = 0 V, Note 1
2.0 V
2.8 V
2.5 K/W
250 ns
Note 1: Pulse test, t 300 μs, duty cycle 2 %
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXGQ85N33PCD1
Description High Speed IGBT
Maker IXYS
Total Page 5 Pages
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