Datasheet4U.com

IXGQ85N33PCD1 - High Speed IGBT

IXYS

📥 Download Datasheet

IXGQ85N33PCD1 Datasheet Preview — Preview of IXGQ85N33PCD1 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IXGQ85N33PCD1
Manufacturer	IXYS
File Size	139.11 KB
Description	High Speed IGBT
Datasheet	IXGQ85N33PCD1-IXYS.pdf

IXGQ85N33PCD1 Product details

Features

International standard package.
Fast tfi for minimum turn off switching losses.
MOS Gate turn-on - drive simplicity.
Positive dVsat/dt for paralleling 260 1.3/10 5.5 Nm/lb. in. g ≤ Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. V GE(th) IC = 1 mA, VCE = VGE 3.0 6.0 V ICES VCE = 330 V VGE = 0 V TJ = 125°C 1 μA 200 μA IGES VCE = 0 V, VGE = ±20 V ±100 nA VCE(sat) VGE = 15V, Note 1 IC = 50 A TJ =.

📁 IXGQ85N33PCD1 Similar Datasheet

IXGQ20N120B - High Voltage IGBT (IXYS Corporation)
IXGQ20N120BD1 - High Voltage IGBT (IXYS Corporation)
IXGQ90N33TC - IGBTs (IXYS Corporation)
IXGQ90N33TCD1 - IGBTs (IXYS Corporation)
IXGA10N60 - High speed IGBT (IXYS Corporation)
IXGA10N60A - High speed IGBT (IXYS Corporation)
IXGA12N100 - IGBT (IXYS Corporation)
IXGA12N100A - IGBT (IXYS Corporation)

Other Datasheets by IXYS

IXGQ150N33TC - IGBT
IXGQ150N33TCD1 - IGBT
IXGQ240N30PB - High Speed IGBT
IXGQ28N120B - High Voltage IGBT
IXGQ28N120BD1 - High Voltage IGBT
IXGQ90N27PB - IGBT

Published: Sep 10, 2015 |