* International standard package
* Fast tfi for minimum turn off switching losses
* MOS Gate turn-on - drive simplicity
* Positive dVsat/dt for paralleling 260 1.3/10 5.5 Nm/lb.in. g ≤ Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic V
IXGQ85N33PCD1 Datasheet (139.11 KB)
IXGQ85N33PCD1
IXYS
139.11 KB
High speed igbt.
Advance Technical Information PolarTM High Speed IGBT with Anti-Parallel Diode for PDP Sustain Circuit IXGQ85N33PCD1 VCES ICP VCE(sat) = = ≤ 330 .
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