IXGT25N160 igbt equivalent, high voltage igbt.
High peak current capability Low saturation voltage MOS Gate turn-on -drive simplicity Rugged NPT structure International standard packages - JEDEC TO-268 and - JEDEC TO-.
Preliminary Data Sheet
IXGH 25N160 IXGT 25N160
VCES = 1600 V IC25 = 75 A VCE(sat) = 2.5 V
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