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IXGT25N160 - High Voltage IGBT

This page provides the datasheet information for the IXGT25N160, a member of the IXGH25N160 High Voltage IGBT family.

Datasheet Summary

Features

  • High peak current capability Low saturation voltage MOS Gate turn-on -drive simplicity Rugged NPT structure International standard packages - JEDEC TO-268 and - JEDEC TO-247 AD Molding epoxies meet UL 94 V-0 flammability classification.

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Datasheet Details

Part number IXGT25N160
Manufacturer IXYS
File Size 163.16 KB
Description High Voltage IGBT
Datasheet download datasheet IXGT25N160 Datasheet
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Full PDF Text Transcription

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High Voltage IGBT For Capacitor Discharge Applications Preliminary Data Sheet IXGH 25N160 IXGT 25N160 VCES = 1600 V IC25 = 75 A VCE(sat) = 2.5 V www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, VGE = 20 V, 1 ms VGE = 15 V, TVJ = 125°C, RG = 20 Ω Clamped inductive load TC = 25°C Maximum Ratings 1600 1600 ± 20 ± 30 75 25 200 ICM = 100 @ 0.8 VCES 300 -55 ... +150 150 -55 ...
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