Datasheet4U Logo Datasheet4U.com

IXGX120N120A3 - Ultra-Low Vsat PT IGBT

Download the IXGX120N120A3 datasheet PDF. This datasheet also covers the IXGK120N120A3 variant, as both devices belong to the same ultra-low vsat pt igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Optimized for Low Conduction Losses z Square RBSOA z High Avalanche Capability z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGK120N120A3-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information GenX3TM A3-Class IGBTs Ultra-Low Vsat PT IGBTs for up to 3kHz Switching IXGK120N120A3 IXGX120N120A3 VCES = IC110 = VCE(sat) ≤ 1200V 120A 2.20V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C ( Chip Capability ) TC = 110°C Terminal Current Limit TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 240 120 75 600 ICM = 240 @ 0.8 • VCES 830 -55 ... +150 A A A A A W °C 150 -55 ... +150 °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.