* International standard packages JEDEC TO-264 and PLUS247TM
* Low switching losses, low V(sat)
* MOS Gate turn-on - drive simplicity Symbol Test Conditions BVCES VGE(th) I CES IGES VCE(sat) IC = 1 mA, VGE = 0 V IC = 750 µA, VCE = VGE V =V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC =
IXGX35N120B Datasheet (40.14 KB)
IXGX35N120B
IXYS
40.14 KB
Igbt.
Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 V = 1200 V CES IC25 = 70 A VCE(sat) = 3.3 V =tfi(ty.
📁 Related Datasheet
IXGX35N120BD1 IGBT (IXYS)
IXGX35N120C HiPerFAST IGBT (IXYS Corporation)
IXGX35N120CD1 HiPerFAST IGBT (IXYS Corporation)
IXGX320N60A3 600V IGBT (IXYS)
IXGX320N60B3 Medium-Speed Low-Vsat PT IGBT (IXYS)
IXGX32N170AH1 High-Voltage IGBT (IXYS)
IXGX32N170H1 High Voltage IGBT (IXYS)
IXGX120N120A3 Ultra-Low Vsat PT IGBT (IXYS)
IXGX120N120B3 High Speed Low Vsat PT IGBT (IXYS)
IXGX120N60A3 Ultra-Low Vsat PT IGBT (IXYS)
