IXGY2N120 igbt equivalent, high voltage igbt.
* International standard package
* Low VCE(sat)
- for low on-state conduction losses
* High current handling capability
* MOS Gate turn-on
- drive simplic.
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values Min. Typ. Max.
BVCES VGE(th) IC.
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