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IXKC19N60C5 - Power MOSFET

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IXYS

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IXKC19N60C5 Power MOSFET by IXYS - Datasheet Preview — Datasheet preview – IXKC19N60C5

Datasheet Details

Part number	IXKC19N60C5
Manufacturer	IXYS
File Size	110.70 KB
Description	Power MOSFET
Datasheet	IXKC19N60C5 Datasheet
Additional preview pages of the IXKC19N60C5 datasheet.

Product details

Features

Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF).
Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness.
Enhanced total power density.

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Published: Nov 2, 2020 |