* Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF)
* Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated f
IXKC19N60C5 Datasheet (110.70 KB)
IXKC19N60C5
IXYS
110.70 KB
Power mosfet.
Advanced Technical Information IXKC 19N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhan.
📁 Related Datasheet
IXKC19N60C5 N-Channel MOSFET (INCHANGE)
IXKC13N80C CoolMOS Power MOSFET (IXYS Corporation)
IXKC13N80C N-Channel MOSFET (INCHANGE)
IXKC15N60C5 Power MOSFET (IXYS)
IXKC15N60C5 N-Channel MOSFET (INCHANGE)
IXKC20N60C CoolMOS Power MOSFET (IXYS Corporation)
IXKC20N60C N-Channel MOSFET (INCHANGE)
IXKC23N60C5 N-Channel MOSFET (INCHANGE)
IXKC23N60C5 Power MOSFET (IXYS)
IXKC25N80C Power MOSFET (IXYS)
