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IXKH20N60C5 Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: IXKH 20N60C5 IXKP 20N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D ID25 = 20 A VDSS = 600 V RDS(on) max = 0.2 Ω TO-247 AD (IXKH) G G D S S q D(TAB) TO-220 AB (IXKP) G D S MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Symbol TC = 25°C TC = 90°C single pulse repetitive ID = 6.6 A; TC = 25°C Conditions TVJ = 25°C Maximum Ratings 600 ± 20 20 13 435 0.

Key Features

  • fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness.
  • Enhanced total power density.

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