IXKH35N60C5 Datasheet PDF

MAXIMUM RATINGS

600 V ± 20 V 35 A 25 A 800 mJ 1.2 mJ 50 V/ns Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = 18 A VDS = VGS; ID = 1.2 mA VDS = 600 V; VGS = 0 V VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10 V; VDS = 400 V; ID = 18 A VGS = 10 V; VDS = 400 V ID = 18 A; RG = 3.3 Ω 90 2.5 3 50 2800 130 60 14 20 10 5 60 5 100 mΩ 3.5 V 5 µA µA 100 nA pF pF 80 nC nC nC ns ns ns ns 0.35 K/W

FEATURES

● fast COOLMOS® * power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness
● Enhanced total power density

APPLICATIONS

● Switched mode power supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Power factor correction (PFC)
● Welding
● Inductive heating
● PDP and LCD adapter *COOLMOS® is a trademark of Infineon Technologies AG.