Overview: Advanced Technical Information IXKP 10N60C5M CoolMOS Power MOSFET
Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 Ω D
G S TO-220 ABFP
G D S MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C
single pulse repetitive ID = 3.4 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0...480 V Maximum Ratings 600 V ± 20 V
5.4 A 3.7 A 225 mJ 0.3 mJ 50 V/ns Symbol
RDSon VGS(th) IDSS
IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max. VGS = 10 V; ID = 5.2 A VDS = VGS; ID = 0.34 mA VDS = 600 V; VGS = 0 V
VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10 V; VDS = 400 V; ID = 5.2 A VGS = 10 V; VDS = 400 V ID = 5.2 A; RG = 4.3 Ω 350
2.5 3
tbd
790 38 17 4 6 tbd tbd tbd tbd 385 mΩ
3.5 V
1 µA µA
100 nA
pF pF
22 nC nC nC
ns ns ns ns
3.
