Overview: IXKP 13N60C5M CoolMOS™ 1) Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
Preliminary data D
G S ID25 = 6.5 A VDSS = 600 V R =DS(on) max 0.3 Ω TO-220 FP G D
S MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C
single pulse repetitive ID = 4.4 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0...480 V Maximum Ratings 600 V ± 20 V
6.5 A 4.5 A 290 mJ 0.44 mJ 50 V/ns Symbol
RDSon VGS(th) IDSS
IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max. VGS = 10 V; ID = 6.6 A VDS = VGS; ID = 0.44 mA VDS = 600 V; VGS = 0 V
VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10 V; VDS = 400 V; ID = 6.6 A VGS = 10 V; VDS = 400 V ID = 6.6 A; RG = 4.3 Ω 270
2.5 3
10
1100 60 22 5 7.6 10 5 40 5 300 mΩ
3.5 V
1 µA µA
100 nA
pF pF
30 nC nC nC
ns ns ns ns
3.
