Overview: IXKH 24N60C5 IXKP 24N60C5 CoolMOS™ 1) Power MOSFET
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
Preliminary data ID25 = 24 A VDSS = 600 V RDS(on) max = 0.165 Ω D TO-247 AD (IXKH) G S G D S
TO-220 AB (IXKP) q D(TAB) MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C
single pulse repetitive ID = 7.9 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0...480 V Maximum Ratings 600 V ± 20 V
24 A 16 A 522 mJ 0.79 mJ 50 V/ns Symbol
RDSon VGS(th) IDSS
IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max. VGS = 10 V; ID = 12 A VDS = VGS; ID = 0.79 mA VDS = 600 V; VGS = 0 V
VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10 V; VDS = 400 V; ID = 12 A VGS = 10 V; VDS = 400 V ID = 12 A; RG = 3.3 Ω 150
2.5 3
10
2000 100 40 9 13 12 5 50 5 165 mΩ
3.5 V
1 µA µA
100 nA
pF pF
52 nC nC nC
ns ns ns ns
0.
