Overview: High Voltage IGBT
in High Voltage ISOPLUS i4-PACTM IXLF 19N250A
IC25 = 32 A VCES = 2500 V VCE(sat) = 3.2 V tf = 250 ns
5 IGBT
Symbol
VCES VGES IC25 IC90 ICM VCEK Ptot
Symbol
VCE(sat)
VGE(th) ICES
IGES td(on) tr td(off) tf Eon Eoff Cies Coes Cres QGon RthJC 1 1 2
5 2 Conditions TVJ = 25°C to 150°C
TC = 25°C TC = 90°C VGE = ±15 V; RG = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings 2500 V ± 20 V 32 A 19 A 70 1200 A V 250 W Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 19 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C VCE = 1500 V; IC = 19 A VGE = ±15 V; RG = 47 Ω 3.2 3.9 V 4.7 V
5 8V
0.15 mA 0.2 mA
500 nA
100 ns 50 ns
600 ns 250 ns
15 mJ 30 mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 1500V; VGE = 15 V; IC = 19 A 2.28 nF 103 pF
43 pF
142 nC
0.
