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IXYS

IXSH15N120B Datasheet Preview

IXSH15N120B Datasheet

High Voltage IGBT

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HIGH Voltage IGBT
IXSH 15N120B
IXST 15N120B
"S" Series - Improved SCSOA Capability
IC25
VCES
VCE(sat)
= 30 A
= 1200 V
= 3.4 V
Preliminary data
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
V
GES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
tSC
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
1200
1200
±20
±30
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
30
15
60
V=
GE
15
V,
T
J
=
125°C,
R
G
=
10
W
Clamped inductive load
I = 40
CM
@ 0.8 VCES
TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W
Non repetitive
10
V
V
V
V
A
A
A
A
ms
PC TC = 25°C
T
J
TJM
T
stg
Md Mounting torque
(TO-247)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering (TO-268)
150 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
300 °C
260 °C
Weight
TO-247
TO-268
6g
4g
Symbol
BVCES
V
GE(th)
ICES
I
GES
V
CE(sat)
Test Conditions
IC = 1.0 mA, VGE = 0 V
I
C
=
250
mA,
V
CE
=
V
GE
VCE = 0.8 • VCES
Note 1
V
CE
=
0
V,
V
GE
=
±20
V
I = I V = 15 V
C C90, GE
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 125°C
TJ = 125°C
1200
3
V
6V
50 mA
2.5 mA
±100 nA
3.0 3.4 V
2.8 V
TO-247 AD (IXSH)
G
C
E
TO-268 (IXST)
G
E
(TAB)
(TAB)
Features
• High Blocking Voltage
• Epitaxial Silicon drift region
- fast switching
- small tail current
- low switching losses
• MOS gate turn-on for drive simplicity
Molding epoxies meet UL 94 V-0
flammability classification
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• DC choppers
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98652A (7/00)
1-2




IXYS

IXSH15N120B Datasheet Preview

IXSH15N120B Datasheet

High Voltage IGBT

No Preview Available !

IXSH 15N120B
IXST 15N120B
Symbol
gfs
Cies
C
oes
Cres
Qg
Q
ge
Qgc
t
d(on)
tri
t
d(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
E
off
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Note 2
7 9.5
S
V = 25 V, V = 0 V, f = 1 MHz
CE GE
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE CES
1400
98
37
57
14
25
pF
pF
pF
nC
nC
nC
Inductive load, TJ = 25°C
I = I , V = 15 V
C C90 GE
RG = 10 W
VCE = 0.8 VCES
Note 3
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
R
G
=
10
W,
V
CE
=
0.8
V
CES
Note 3
(TO-247)
30 ns
25 ns
148 300 ns
126 250 ns
1.5 2.9 mJ
30 ns
25 ns
1.1 mJ
265 ns
298 ns
3.1 mJ
0.83 K/W
0.25 K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t £ 300 ms, duty cycle £ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
© 2000 IXYS All rights reserved
Min. Recommended Footprint
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2


Part Number IXSH15N120B
Description High Voltage IGBT
Maker IXYS
Total Page 2 Pages
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