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IXYS
IXYS

IXSH24N60 Datasheet Preview

IXSH24N60 Datasheet

IGBT

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IXSH24N60 pdf
Advance Technical Information
HiPerFASTTM IGBT
Short Circuit SOA Capability
IXSH24N60
IXSH24N60A
VCES
600V
600V
IC90
24A
24A
VCE(sat)
2.2V
2.7V
TO-247 (IXSH)
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
tSC
(SCSOA)
P
C
T
J
TJM
Tstg
Md
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
VGE = 15V, TJ = 125°C, RG = 10Ω
Clamped inductive load
VGE = 15V, VCE = 360V, TJ = 125°C
RG = 82Ω, non repetitive
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
Maximum Ratings
600
600
±20
±30
48
24
96
V
V
V
V
A
A
A
ICM = 48
@0.8 VCES
10
A
V
μs
150
-55 ... +150
150
-55 ... +150
1.13 / 10
300
260
6
W
°C
°C
°C
Nm/lb.in.
°C
°C
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
BVCES
V
GE(th)
IC = 250μA, VCE = VGE
IC = 1.5mA, VCE = VGE
600 V
4.0 7.0 V
sICES
IGES
VCE(sat)
VCE = 0.8 VCES
VGE = 0V
TJ = 125°C
VCE = 0V, VGE = ±20V
IC = 24A, VGE = 15V, Note 1
IXSH24N60
IXSH24N60A
200 μA
1 mA
±100 nA
2.2 V
2.7 V
G
CE
TAB
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z International standard package
JEDEC TO-247AD
z High frequency IGBT with guaranteed
Short Circuit SOA Capability
z 2nd generation HDMOSTM process
z Low VCE(SAT)
- for low on-state conduction losses
z MOS Gate turn-on
- drive simplicity
Applications
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switch-mode and resonant-mode
power supplies
z Welding
Advantages
z Easy to mount with 1 screw
(isolated mounting screw hole)
z Switching speed for high frequency
applications
z High power density
© 2008 IXYS CORPORATION, All rights reserved
DS92809I(07/08)



IXYS
IXYS

IXSH24N60 Datasheet Preview

IXSH24N60 Datasheet

IGBT

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IXSH24N60 pdf
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
g
fs
IC = 24A, VCE = 10V, Note 1
9 23
S
IC(ON)
VGE = 15V, VCE = 10V
65 A
Cies
Coes
Cres
Qg
Qge
Q
gc
t
d(on)
tri
td(off)
tfi
E
off
td(on)
tri
Eon
td(off)
t
fi
Eoff
VCE = 25V, VGE = 0V, f = 1MHz
IC = 24A, VGE = 15V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = 24A, VGE = 15V
VCE = 480V, RG = 10Ω
IXSH24N60
IXSH24N60A
IXSH24N60A
Inductive
load,
T
J
=
125°C
IC = 24A, VGE = 15V
VCE = 480V, RG = 10Ω
IXSH24N60
IXSH24N60A
IXSH24N60
IXSH24N60A
1800
160
45
75
20
35
100
200
450
500
275
2.0
100
200
1.2
475
600
450
4.0
3.0
90
30
50
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
ns
mJ
mJ
RthJC
R
thCK
0.83 °C/W
0.21 °C/W
IXSH24N60
IXSH24N60A
TO-247 (IXSH) Outline
123
P
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Notes: 1. Pulse test, t 300μs; duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXSH24N60
Description IGBT
Maker IXYS
Total Page 2 Pages
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