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IXYS
IXYS

IXSP24N60B Datasheet Preview

IXSP24N60B Datasheet

High Speed IGBT

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IXSP24N60B pdf
High Speed IGBT
Short Circuit SOA Capability
Preliminary Data Sheet
IXSP 24N60B
VCES
IC25
V
CE(sat)
= 600 V
= 48 A
= 2.5 V
tfi typ = 170 ns
Symbol
Test Conditions
VCES
VCGR
V
GES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
tSC
(SCSOA)
PC
T
J
TJM
Tstg
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
V=
GE
15
V,
T
J
=
125°C,
R
G
=
33
Clamped inductive load, VCC= 0.8 VCES
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 33 Ω, non repetitive
TC = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
600
±20
±30
48
24
96
I = 48
CM
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
µs
150
-55 ... +150
150
-55 ... +150
2
300
W
°C
°C
°C
g
°C
TO-220 (IXSP)
GC E
C (TAB)
G = Gate
E = Emitter
TAB = Collector
Features
z International standard packages
z Guaranteed Short Circuit SOA
capability
z Low VCE(sat)
- for low on-state conduction losses
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Fast Fall Time for switching speeds
up to 50 kHz
Symbol
BVCES
VGE(th)
ICES
I
GES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 250 µA, VGE = 0 V
IC = 1.5 mA, VCE = VGE
VCE = 0.8 • VCES
V =0V
GE
V
CE
=
0
V,
V
GE
=
±20
V
IC = IC90, VGE = 15 V
TJ = 25°C
T
J
=
125°C
600
3.5
V
6.5 V
25 µA
1 mA
±100 nA
2.5 V
Applications
z AC and DC motor speed control
z Uninterruptible power supplies (UPS)
z Welding
Advantages
z Easy to mount with 1 screw
z High power density
© 2003 IXYS All rights reserved
DS99023(03/03)



IXYS
IXYS

IXSP24N60B Datasheet Preview

IXSP24N60B Datasheet

High Speed IGBT

No Preview Available !

IXSP24N60B pdf
IXSP 24N60B
Symbol
gfs
Cies
C
oes
Cres
Q
g
Qge
Q
gc
t
d(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
V = 25 V, V = 0 V, f = 1 MHz
CE GE
9 13
1450
130
37
S
pF
pF
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
41 nC
18 nC
18 nC
Inductive load, TJ = 25°C
I = I , V = 15 V, L = 100 µH
C C90 GE
VCE = 0.8 VCES, RG = 33
50 ns
50 ns
150 250 ns
170 300 ns
1.3 2.6 mJ
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V,
VCE = 0.8 VCES, RG = 33
55 ns
75 ns
1.2 mJ
190 ns
280 ns
2.4 mJ
0.83 K/W
0.25
K/W
TO-220 Outline
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343


Part Number IXSP24N60B
Description High Speed IGBT
Maker IXYS
Total Page 2 Pages
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IXSP24N60B pdf
IXSP24N60B Datasheet PDF
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