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IXST45N120B Datasheet High Voltage IGBT

Manufacturer: IXYS (now Littelfuse)

Download the IXST45N120B datasheet PDF. This datasheet also includes the IXSH45N120B variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXSH45N120B-IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

High Voltage IGBT IXSH 45N120B IXST 45N120B "S" Series - Improved SCSOA Capability IC25 VCES VCE(sat) = 75 A = 1200 V = 3.0 V Preliminary data Symbol V CES VCGR VGES VGEM IC25 I C90 ICM SSOA (RBSOA) tSC Test Conditions Maximum Ratings T J = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient 1200 1200 ±20 ±30 TC = 25°C (limited by leads) T C = 90°C TC = 25°C, 1 ms 75 45 180 VGE= 15 V, TJ = 125°C, RG = 5 W Clamped inductive load ICM = 90 @ 0.8 V CES TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 5 W 10 V V V V A A A A ms PC TC = 25°C TJ TJM Tstg M Mounting torque d Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight (TO-247) TO-247 300 W -55 ...

+150 150 -55 ...

+150 °C °C °C 1.13/10 Nm/lb.in.

Key Features

  • Epitaxial Silicon drift region - fast switching - small tail current.
  • MOS gate turn-on for drive simplicity.

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