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IXTA05N100HV Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05N100 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ 150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-220 TO-263 TO-263HV Maximum Ratings 1000 V 1000 V 30 V 40 V 750 mA 3 A 1 A 100 mJ 3 V/ns 40 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 3.0 g 2.5 g 2.5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 250A IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 375mA, Note 1 Characteristic Values Min. Typ. Max. 1000 V 2.5 4.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • High Voltage Package (TO-263HV).
  • Fast Switching Times.
  • Avalanche Rated.
  • Rds(on).

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Similar Datasheet

Brand Logo Part Number Description Manufacturer
IXYS Corporation Logo IXTA05N100 Power MOSFET IXYS Corporation
INCHANGE Logo IXTA05N100 N-Channel MOSFET INCHANGE

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