IXTA1N80 mosfet equivalent, high voltage mosfet.
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions
! International standard packages ! High voltage, Low RDS (on) HDMOS.
cell structure
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS.
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